Electrical Characteristics of Floating Island IGBT Using Trench Gate Structure
نویسندگان
چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Journal of the Korean Institute of Electrical and Electronic Material Engineers
سال: 2012
ISSN: 1226-7945
DOI: 10.4313/jkem.2012.25.4.247